Autori: Sasic Rajko M
| Naslov | A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET (Article) |
| Autori | Ostojic Stanko M Sasic Rajko M |
| Info | OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, (2016), vol. 10 br. 1-2, str. 50-54 |
| Projekat | Ministry of Science and Technological Development, Republic of Serbia [III 45003, 43011] |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science Scopus |
     |
| Naslov | Modeling of carriers mobility impact on CNT FIET current-voltage characteristics (Article) |
| Autori | Lukic Petar M  Sasic Rajko M
|
| Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2014), vol. 16 br. 11-12, str. 1418-1424 |
| Projekat | Ministry of Science and Technological Development, Government of the Republic of Serbia [45003] |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science |
|
|
| Naslov | Surrounding gate long channel nanowire MOSFET modelling-extended analysis (Article; Proceedings Paper) |
| Autori | Ostojic Stanko M Sasic Rajko M Lukic Petar M Abood Imhimmad
|
| Info | PHYSICA SCRIPTA, (2014), vol. 89 br. 11, str. - |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
|
|
| Naslov | 4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis (Article) |
| Autori | Alkoash Abed Alkhem Sasic Rajko M Lukic Petar M Ostojic Stanko M
|
| Info | PHYSICA SCRIPTA, (2014), vol. 89 br. 1, str. - |
| Projekat | Ministry of Science and Technological Development, Government of the Republic of Serbia (Project III) [45003] |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
|
|
| Naslov | Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy (Article) |
| Autori | Abood Imhimmad Sasic Rajko M Ostojic Stanko M Lukic Petar M
|
| Info | JAPANESE JOURNAL OF APPLIED PHYSICS, (2013), vol. 52 br. 9, str. - |
| Projekat | Ministry of Science and Technological Development, Government of the Republic of Serbia [45003] |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
|
|
| Naslov | 4H-SiC VDMOS - drift-region saturation, channel saturation and their order of appearance (Article) |
| Autori | Abood Imhimmad Lukic Petar M Sasic Rajko M Alkoash Abed Alkhem Ostojic Stanko M
|
| Info | OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, (2013), vol. 7 br. 5-6, str. 329-333 |
| Projekat | Ministry of Science and Technological Development, Goverment of the Republic of Serbia [45003] |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science Scopus |
|
|
| Naslov | Analytical model of CNT FET current-voltage characteristics (Article) |
| Autori | Vasic Dusan B Lukic Petar M Lukic Vladan M Sasic Rajko M
|
| Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2012), vol. 14 br. 1-2, str. 176-182 |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science |
|
|
| Naslov | Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics (Article) |
| Autori | Lukic Petar M Sasic Rajko M Loncar Boris B Zunjic Aleksandar G
|
| Info | OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, (2011), vol. 5 br. 5-6, str. 551-554 |
| Projekat | Ministry of Science and Technological Development, Republic of Serbia[45003 (doc. 401-00-1/2011-01/13), 43011 (doc. 401-00-1/2011-01/13)] |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science |
|
|
| Naslov | An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs (Article) |
| Autori | Alkoash Abedalkhem Sasic Rajko M Ostojic Stanko M Lukic Petar M
|
| Info | JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE, (2011), vol. 8 br. 1, str. 47-50 |
| Projekat | Serbian Ministry of Science and Technological Development |
| Ispravka | Web of Science Članak Elečas Rang časopisa Citati: Web of Science |
|
|
| Naslov | The influence of quantum effects on spatial distribution of carriers in surrounding-gate cylindrical MOSFETs (Article) |
| Autori | Sasic Rajko M Lukic Petar M Ostojic Stanko M Alkoash Abedalkhem
|
| Info | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, (2010), vol. 12 br. 5, str. 1161-1164 |
| Projekat | Serbian Ministry of Science and Technological Development |
| Ispravka | Web of Science Elečas Rang časopisa Citati: Web of Science |
|
|
